The structure and electronic transport properties of hole-doped (formula presented) perovskite have been investigated as a function of pressure up to about 15 GPa. Though the applied pressure enhances the electrical conductivity, the high-pressure resistivity data point out a competing mechanism interfering with the pressure-induced charge delocalization that prevent the system from reaching a fully metallic state around room temperature. X-ray diffraction results reveal unexpected structural modifications with increasing pressure that can be interpreted with changes in the coherence length of the Jahn-Teller distortions. © 2001 The American Physical Society.

High-pressure structure and electronic transport in hole-doped La3/4Ca1/4MnO3 perovskites / Meneghini, C.; Levy, D.; Mobilio, S.; Ortolani, M.; Nunez-Reguero, M.; Kumar, A.; Sarma, D. D.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 65:1(2002), pp. 1-4. [10.1103/PhysRevB.65.012111]

High-pressure structure and electronic transport in hole-doped La3/4Ca1/4MnO3 perovskites

Ortolani M.;
2002

Abstract

The structure and electronic transport properties of hole-doped (formula presented) perovskite have been investigated as a function of pressure up to about 15 GPa. Though the applied pressure enhances the electrical conductivity, the high-pressure resistivity data point out a competing mechanism interfering with the pressure-induced charge delocalization that prevent the system from reaching a fully metallic state around room temperature. X-ray diffraction results reveal unexpected structural modifications with increasing pressure that can be interpreted with changes in the coherence length of the Jahn-Teller distortions. © 2001 The American Physical Society.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1593796
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