We report electroluminescence originating from L-valley transitions in n-type Ge/Si0.15Ge0.85 quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of Δ f / f ≈ 0.2. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active region employing a vertical optical transition, and the observed spectral features are well described by non-equilibrium Green's function calculations. The presence of two peaks highlights a suboptimal injection in the upper state of the radiative transition. Comparison of the electroluminescence spectra with a similar GaAs/AlGaAs structure yields one order of magnitude lower emission efficiency.

THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures / Stark, D.; Mirza, M.; Persichetti, L.; Montanari, M.; Markmann, S.; Beck, M.; Grange, T.; Birner, S.; Virgilio, M.; Ciano, C.; Ortolani, M.; Corley, C.; Capellini, G.; Di Gaspare, L.; De Seta, M.; Paul, D. J.; Faist, J.; Scalari, G.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 118:10(2021), p. 101101. [10.1063/5.0041327]

THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures

Ciano C.;Ortolani M.;
2021

Abstract

We report electroluminescence originating from L-valley transitions in n-type Ge/Si0.15Ge0.85 quantum cascade structures centered at 3.4 and 4.9 THz with a line broadening of Δ f / f ≈ 0.2. Three strain-compensated heterostructures, grown on a Si substrate by ultrahigh vacuum chemical vapor deposition, have been investigated. The design is based on a single quantum well active region employing a vertical optical transition, and the observed spectral features are well described by non-equilibrium Green's function calculations. The presence of two peaks highlights a suboptimal injection in the upper state of the radiative transition. Comparison of the electroluminescence spectra with a similar GaAs/AlGaAs structure yields one order of magnitude lower emission efficiency.
2021
terahertz, electroluminescence, quantum wells, quantum cascade laser
01 Pubblicazione su rivista::01a Articolo in rivista
THz intersubband electroluminescence from n-type Ge/SiGe quantum cascade structures / Stark, D.; Mirza, M.; Persichetti, L.; Montanari, M.; Markmann, S.; Beck, M.; Grange, T.; Birner, S.; Virgilio, M.; Ciano, C.; Ortolani, M.; Corley, C.; Capellini, G.; Di Gaspare, L.; De Seta, M.; Paul, D. J.; Faist, J.; Scalari, G.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 118:10(2021), p. 101101. [10.1063/5.0041327]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1581484
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