High-quality n-type continuously graded Ge-rich Si1−xGex parabolic quantum wells with different doping levels were grown by using ultrahigh-vacuum chemical vapor deposition on Si(001) substrates. A thorough structural characterization study highlights an ideal parabolic compositional profile. THz intersubband absorption has been investigated in modulation-doped samples and samples directly doped in the wells. The comparison of experimental absorption data and theoretical calculations allowed us to quantify the impact of electron correlation effects on the absorption resonances in the different doping conditions and for electron sheet densities in the ( cm−2 range. A single optical resonance is present in modulation doped samples. Its peak energy and line shape are independent of temperature-induced variations of the electron distribution in the subbands up to 300 K, in agreement with the generalized Kohn theorem. This achievement represents a relevant step forward for the development of CMOS compatible optoelectronic devices in the THz spectral range, where thermal charge fluctuations play a key role.

THz intersubband absorption in n-type Si1−xGex parabolic quantum wells / Montanari, M.; Ciano, C.; Persichetti, L.; Corley, C.; Baldassarre, L.; Ortolani, M.; Di Gaspare, L.; Capellini, G.; Stark, D.; Scalari, G.; Virgilio, M.; De Seta, M.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 118:16(2021), p. 163106. [10.1063/5.0048344]

THz intersubband absorption in n-type Si1−xGex parabolic quantum wells

Ciano C.;Baldassarre L.;Ortolani M.;
2021

Abstract

High-quality n-type continuously graded Ge-rich Si1−xGex parabolic quantum wells with different doping levels were grown by using ultrahigh-vacuum chemical vapor deposition on Si(001) substrates. A thorough structural characterization study highlights an ideal parabolic compositional profile. THz intersubband absorption has been investigated in modulation-doped samples and samples directly doped in the wells. The comparison of experimental absorption data and theoretical calculations allowed us to quantify the impact of electron correlation effects on the absorption resonances in the different doping conditions and for electron sheet densities in the ( cm−2 range. A single optical resonance is present in modulation doped samples. Its peak energy and line shape are independent of temperature-induced variations of the electron distribution in the subbands up to 300 K, in agreement with the generalized Kohn theorem. This achievement represents a relevant step forward for the development of CMOS compatible optoelectronic devices in the THz spectral range, where thermal charge fluctuations play a key role.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1581166
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