Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I3 basal stacking fault and investigate its structural and electronic properties. Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present.

Unveiling Planar Defects in Hexagonal Group IV Materials / Fadaly, E. M. T.; Marzegalli, A.; Ren, Y.; Sun, L.; Dijkstra, A.; De Matteis, D.; Scalise, E.; Sarikov, A.; De Luca, M.; Rurali, R.; Zardo, I.; Haverkort, J. E. M.; Botti, S.; Miglio, L.; Bakkers, E. P. A. M.; Verheijen, M. A.. - In: NANO LETTERS. - ISSN 1530-6984. - 21:8(2021), pp. 3619-3625. [10.1021/acs.nanolett.1c00683]

Unveiling Planar Defects in Hexagonal Group IV Materials

Sun L.;De Luca M.;
2021

Abstract

Recently synthesized hexagonal group IV materials are a promising platform to realize efficient light emission that is closely integrated with electronics. A high crystal quality is essential to assess the intrinsic electronic and optical properties of these materials unaffected by structural defects. Here, we identify a previously unknown partial planar defect in materials with a type I3 basal stacking fault and investigate its structural and electronic properties. Electron microscopy and atomistic modeling are used to reconstruct and visualize this stacking fault and its terminating dislocations in the crystal. From band structure calculations coupled to photoluminescence measurements, we conclude that the I3 defect does not create states within the hex-Ge and hex-Si band gap. Therefore, the defect is not detrimental to the optoelectronic properties of the hex-SiGe materials family. Finally, highlighting the properties of this defect can be of great interest to the community of hex-III-Ns, where this defect is also present.
2021
defects; hexagonal Ge; hexagonal group IV; hexagonal Si; I; 3; basal stacking fault; Nanowires
01 Pubblicazione su rivista::01a Articolo in rivista
Unveiling Planar Defects in Hexagonal Group IV Materials / Fadaly, E. M. T.; Marzegalli, A.; Ren, Y.; Sun, L.; Dijkstra, A.; De Matteis, D.; Scalise, E.; Sarikov, A.; De Luca, M.; Rurali, R.; Zardo, I.; Haverkort, J. E. M.; Botti, S.; Miglio, L.; Bakkers, E. P. A. M.; Verheijen, M. A.. - In: NANO LETTERS. - ISSN 1530-6984. - 21:8(2021), pp. 3619-3625. [10.1021/acs.nanolett.1c00683]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1558068
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