Low-dimensional van der Waals materials have been extensively studied as a platform with which to generate quantum effects. Advancing this research, topological quantum materials with van der Waals structures are currently receiving a great deal of attention. Here, we use the concept of designing topological materials by the van der Waals stacking of quantum spin Hall insulators. Most interestingly, we find that a slight shift of inversion centre in the unit cell caused by a modification of stacking induces a transition from a trivial insulator to a higher-order topological insulator. Based on this, we present angle-resolved photoemission spectroscopy results showing that the real three-dimensional material Bi4Br4 is a higher-order topological insulator. Our demonstration that various topological states can be selected by stacking chains differently, combined with the advantages of van der Waals materials, offers a playground for engineering topologically non-trivial edge states towards future spintronics applications.

Evidence for a higher-order topological insulator in a three-dimensional material built from van der Waals stacking of bismuth-halide chains / Noguchi, R.; Kobayashi, M.; Jiang, Z.; Kuroda, K.; Takahashi, T.; Xu, Z.; Lee, D.; Hirayama, M.; Ochi, M.; Shirasawa, T.; Zhang, P.; Lin, C.; Bareille, C.; Sakuragi, S.; Tanaka, H.; Kunisada, S.; Kurokawa, K.; Yaji, K.; Harasawa, A.; Kandyba, V.; Giampietri, A.; Barinov, A.; Kim, T. K.; Cacho, C.; Hashimoto, M.; Lu, D.; Shin, S.; Arita, R.; Lai, K.; Sasagawa, T.; Kondo, T.. - In: NATURE MATERIALS. - ISSN 1476-1122. - 20:4(2021), pp. 473-479. [10.1038/s41563-020-00871-7]

Evidence for a higher-order topological insulator in a three-dimensional material built from van der Waals stacking of bismuth-halide chains

Giampietri A.;
2021

Abstract

Low-dimensional van der Waals materials have been extensively studied as a platform with which to generate quantum effects. Advancing this research, topological quantum materials with van der Waals structures are currently receiving a great deal of attention. Here, we use the concept of designing topological materials by the van der Waals stacking of quantum spin Hall insulators. Most interestingly, we find that a slight shift of inversion centre in the unit cell caused by a modification of stacking induces a transition from a trivial insulator to a higher-order topological insulator. Based on this, we present angle-resolved photoemission spectroscopy results showing that the real three-dimensional material Bi4Br4 is a higher-order topological insulator. Our demonstration that various topological states can be selected by stacking chains differently, combined with the advantages of van der Waals materials, offers a playground for engineering topologically non-trivial edge states towards future spintronics applications.
2021
Topological Insulator; ARPES; Bismuth Halide
01 Pubblicazione su rivista::01a Articolo in rivista
Evidence for a higher-order topological insulator in a three-dimensional material built from van der Waals stacking of bismuth-halide chains / Noguchi, R.; Kobayashi, M.; Jiang, Z.; Kuroda, K.; Takahashi, T.; Xu, Z.; Lee, D.; Hirayama, M.; Ochi, M.; Shirasawa, T.; Zhang, P.; Lin, C.; Bareille, C.; Sakuragi, S.; Tanaka, H.; Kunisada, S.; Kurokawa, K.; Yaji, K.; Harasawa, A.; Kandyba, V.; Giampietri, A.; Barinov, A.; Kim, T. K.; Cacho, C.; Hashimoto, M.; Lu, D.; Shin, S.; Arita, R.; Lai, K.; Sasagawa, T.; Kondo, T.. - In: NATURE MATERIALS. - ISSN 1476-1122. - 20:4(2021), pp. 473-479. [10.1038/s41563-020-00871-7]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1550107
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