Strain distribution in (InAs) n ∕(InSb) m multilayer: A first principles calculations

Using first principles calculations we unveil the interfacial strain relaxation in (wurtzite-InAs) n /(zinc-blend-InSb) m multilayer specimens. We have shown that the distribution of strain along the growth direction depends on the relative thickness of the segments of the multilayer. The observed result has been explained in view of the propagation of lattice deformation due to lattice mismatch between InAs and InSb. To the end we have demonstrated that the fine tuning of the strain with the thickness of layers can be exploited to vary the band gap along the length of the multilayer. The modulation of the band gap in a multilayer system finds various applications in designing optoelectronic devices.