We report a detailed ab initio study of two superlattice heterostructures, one component of which is a unit cell of CuPt ordered InSb0.5As0.5. This alloy part of the heterostructures is a topological semimetal. The other component of each system is a semiconductor, zincblende-InSb, and wurtzite-InAs. Both heterostructures are semiconductors. Our theoretical analysis predicts that the variation in the thickness of the InSb layer in InSb/InSb0.5As0.5 heterostructure renders altered bandgaps with different characteristics (i.e., direct or indirect). The study holds promise for fabricating heterostructures, in which the modulation of the thickness of the layers changes the number of carrier pockets in these systems.

Electronic band structure engineering in InAs/InSbAs and InSb/InSbAs superlattice heterostructures / Patra, A.; Chakraborty, M.; Roy, A.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 125:2(2019), p. 025704. [10.1063/1.5056196]

Electronic band structure engineering in InAs/InSbAs and InSb/InSbAs superlattice heterostructures

Patra A.;
2019

Abstract

We report a detailed ab initio study of two superlattice heterostructures, one component of which is a unit cell of CuPt ordered InSb0.5As0.5. This alloy part of the heterostructures is a topological semimetal. The other component of each system is a semiconductor, zincblende-InSb, and wurtzite-InAs. Both heterostructures are semiconductors. Our theoretical analysis predicts that the variation in the thickness of the InSb layer in InSb/InSb0.5As0.5 heterostructure renders altered bandgaps with different characteristics (i.e., direct or indirect). The study holds promise for fabricating heterostructures, in which the modulation of the thickness of the layers changes the number of carrier pockets in these systems.
2019
Semiconductors-Semimetal Heterostructures, First-principle calculations, Crystal lattices, Electronic band structure
01 Pubblicazione su rivista::01a Articolo in rivista
Electronic band structure engineering in InAs/InSbAs and InSb/InSbAs superlattice heterostructures / Patra, A.; Chakraborty, M.; Roy, A.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 125:2(2019), p. 025704. [10.1063/1.5056196]
File allegati a questo prodotto
File Dimensione Formato  
Patra_Electronic band structure engineering_2019.pdf

solo gestori archivio

Tipologia: Versione editoriale (versione pubblicata con il layout dell'editore)
Licenza: Tutti i diritti riservati (All rights reserved)
Dimensione 2.15 MB
Formato Adobe PDF
2.15 MB Adobe PDF   Contatta l'autore

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1549726
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 3
  • ???jsp.display-item.citation.isi??? 3
social impact