The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the transverse optical phonon mode along the axis of these nanowires. We attribute the observed shift to a residual strain arising from the InAs/InSb lattice mismatch. We find that the strain is maximum at the interface and then monotonically relaxes towards the tip of the nanowires. We also analyze the crystal structure of the InSb segment through selected area electron diffraction measurements and electron diffraction tomography on individual nanowires.
Mapping of axial strain in InAs/InSb heterostructured nanowires / Patra, A.; Panda, J. K.; Roy, A.; Gemmi, M.; David, J.; Ercolani, D.; Sorba, L.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 107:9(2015), p. 093103. [10.1063/1.4929979]
Mapping of axial strain in InAs/InSb heterostructured nanowires
Patra A.;
2015
Abstract
The article presents a mapping of the residual strain along the axis of InAs/InSb heterostructured nanowires. Using confocal Raman measurements, we observe a gradual shift in the transverse optical phonon mode along the axis of these nanowires. We attribute the observed shift to a residual strain arising from the InAs/InSb lattice mismatch. We find that the strain is maximum at the interface and then monotonically relaxes towards the tip of the nanowires. We also analyze the crystal structure of the InSb segment through selected area electron diffraction measurements and electron diffraction tomography on individual nanowires.File | Dimensione | Formato | |
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