In the present study, the electrical resistivity (ρ) as a function of the temperature (T) has been measured in polycrystalline ZnO, Co-doped ZnO (ZCO) and H irradiated ZCO (HZCO) samples, in the 300-20 K range. The achieved results show impressive effects of Co doping and H irradiation on the ZnO transport properties. The Co dopant increases the ZnO resistivity at highT(HT), whereas it has an opposite effect at lowT(LT). H balances the Co effects by neutralizing theρincrease at HT and strengthening its decrease at LT. A careful analysis of theρdata permits to identify two different thermally activated processes as those governing the charge transport in the three materials at HT and LT, respectively. The occurrence of such processes has been fully explained in terms of a previously proposed model based on an acceptor impurity band, induced by the formation of Co-oxygen vacancy complexes, as well as known effects produced by H on the ZnO properties. The same analysis shows that both Co and H reduce the effects of grain boundaries on the transport processes. The high conductivity of HZCO in the wholeT-range and its low noise level resulting from electric noise spectroscopy make this material a very interesting one for technological applications.

Transport mechanisms in Co-doped ZnO (ZCO) and H-irradiated ZCO polycrystalline thin films / Di Trolio, A.; Amore Bonapasta, A.; Barone, C.; Leo, A.; Carapella, G.; Pagano, S.; Polimeni, A.; Testa, A. M.. - In: PHYSICAL CHEMISTRY CHEMICAL PHYSICS. - ISSN 1463-9076. - 23:3(2021), pp. 2368-2376. [10.1039/d0cp06401g]

Transport mechanisms in Co-doped ZnO (ZCO) and H-irradiated ZCO polycrystalline thin films

Carapella G.;Polimeni A.;
2021

Abstract

In the present study, the electrical resistivity (ρ) as a function of the temperature (T) has been measured in polycrystalline ZnO, Co-doped ZnO (ZCO) and H irradiated ZCO (HZCO) samples, in the 300-20 K range. The achieved results show impressive effects of Co doping and H irradiation on the ZnO transport properties. The Co dopant increases the ZnO resistivity at highT(HT), whereas it has an opposite effect at lowT(LT). H balances the Co effects by neutralizing theρincrease at HT and strengthening its decrease at LT. A careful analysis of theρdata permits to identify two different thermally activated processes as those governing the charge transport in the three materials at HT and LT, respectively. The occurrence of such processes has been fully explained in terms of a previously proposed model based on an acceptor impurity band, induced by the formation of Co-oxygen vacancy complexes, as well as known effects produced by H on the ZnO properties. The same analysis shows that both Co and H reduce the effects of grain boundaries on the transport processes. The high conductivity of HZCO in the wholeT-range and its low noise level resulting from electric noise spectroscopy make this material a very interesting one for technological applications.
2021
hydrogen, magnetism, transport properties
01 Pubblicazione su rivista::01a Articolo in rivista
Transport mechanisms in Co-doped ZnO (ZCO) and H-irradiated ZCO polycrystalline thin films / Di Trolio, A.; Amore Bonapasta, A.; Barone, C.; Leo, A.; Carapella, G.; Pagano, S.; Polimeni, A.; Testa, A. M.. - In: PHYSICAL CHEMISTRY CHEMICAL PHYSICS. - ISSN 1463-9076. - 23:3(2021), pp. 2368-2376. [10.1039/d0cp06401g]
File allegati a questo prodotto
File Dimensione Formato  
Di Troilo_Transport mechanisms_2021.pdf

solo gestori archivio

Tipologia: Versione editoriale (versione pubblicata con il layout dell'editore)
Licenza: Tutti i diritti riservati (All rights reserved)
Dimensione 722.74 kB
Formato Adobe PDF
722.74 kB Adobe PDF   Contatta l'autore

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1545323
Citazioni
  • ???jsp.display-item.citation.pmc??? 2
  • Scopus 6
  • ???jsp.display-item.citation.isi??? 6
social impact