Metal-insulator transition (MIT) is one of the most essential topics in condensed matter physics and materials science. The accompanied drastic change in electrical resistance can be exploited in electronic devices, such as data storage and memory technology. It is generally accepted that the underlying mechanism of most MITs is an interplay of electron correlation effects (Mott type) and disorder effects (Anderson type), and to disentangle the two effects is difficult. Recent progress on the crystalline Ge1Sb2Te4 (GST) compound provides compelling evidence for a disorder-driven MIT. In this work, we discuss the presence of strong disorder in GST, and elucidate its effects on electron localization and transport properties. We also show how the degree of disorder in GST can be reduced via thermal annealing, triggering a disorder-driven metal-insulator transition. The resistance switching by disorder tuning in crystalline GST may enable novel multilevel data storage devices.

A review on disorder-driven metal-insulator transition in crystalline vacancy-rich GeSbTe phase-change materials / Wang, J. -J.; Xu, Y. -Z.; Mazzarello, R.; Wuttig, M.; Zhang, W.. - In: MATERIALS. - ISSN 1996-1944. - 10:8(2017), p. 862. [10.3390/ma10080862]

A review on disorder-driven metal-insulator transition in crystalline vacancy-rich GeSbTe phase-change materials

Mazzarello R.;
2017

Abstract

Metal-insulator transition (MIT) is one of the most essential topics in condensed matter physics and materials science. The accompanied drastic change in electrical resistance can be exploited in electronic devices, such as data storage and memory technology. It is generally accepted that the underlying mechanism of most MITs is an interplay of electron correlation effects (Mott type) and disorder effects (Anderson type), and to disentangle the two effects is difficult. Recent progress on the crystalline Ge1Sb2Te4 (GST) compound provides compelling evidence for a disorder-driven MIT. In this work, we discuss the presence of strong disorder in GST, and elucidate its effects on electron localization and transport properties. We also show how the degree of disorder in GST can be reduced via thermal annealing, triggering a disorder-driven metal-insulator transition. The resistance switching by disorder tuning in crystalline GST may enable novel multilevel data storage devices.
2017
Anderson insulator; disorder; electron localization; metal-insulator transition; phase-change materials
01 Pubblicazione su rivista::01a Articolo in rivista
A review on disorder-driven metal-insulator transition in crystalline vacancy-rich GeSbTe phase-change materials / Wang, J. -J.; Xu, Y. -Z.; Mazzarello, R.; Wuttig, M.; Zhang, W.. - In: MATERIALS. - ISSN 1996-1944. - 10:8(2017), p. 862. [10.3390/ma10080862]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1465813
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