We identify a similar feature in the chemical-bonding nature of seemingly different phase-change materials (PCMs) for data storage. This affords new insight into the "next-generation'' material In3SbTe2, establishes a hitherto missing link to the more ubiquitous Ge-Sb-Te alloys, and encourages the search for new PCMs beyond established electron-counting schemes.
A chemical link between Ge-Sb-Te and In-Sb-Te phase-change materials / Deringer, Vl; Zhang, W; Rausch, P; Mazzarello, R; Dronskowski, R; Wuttig, M. - In: JOURNAL OF MATERIALS CHEMISTRY. C. - ISSN 2050-7526. - 3:37(2015), pp. 9519-9523. [10.1039/c5tc02314a]
A chemical link between Ge-Sb-Te and In-Sb-Te phase-change materials
Mazzarello R;
2015
Abstract
We identify a similar feature in the chemical-bonding nature of seemingly different phase-change materials (PCMs) for data storage. This affords new insight into the "next-generation'' material In3SbTe2, establishes a hitherto missing link to the more ubiquitous Ge-Sb-Te alloys, and encourages the search for new PCMs beyond established electron-counting schemes.File allegati a questo prodotto
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