Phase-change heterostructure enables ultralow noise and drift for memory operation

Ding, K.; Wang, J.; Zhou, Y.; Tian, H.; Lu, L.; Mazzarello, R.; Jia, C.; Zhang, W.; Rao, F.; Ma, E.

doi:10.1126/science.aay0291

Artificial intelligence and other data-intensive applications have escalated the demand for data storage and processing. New computing devices, such as phase-change random access memory (PCRAM)–based neuro-inspired devices, are promising options for breaking the von Neumann barrier by unifying storage with computing in memory cells. However, current PCRAM devices have considerable noise and drift in electrical resistance that erodes the precision and consistency of these devices. We designed a phase-change heterostructure (PCH) that consists of alternately stacked phase-change and confinement nanolayers to suppress the noise and drift, allowing reliable iterative RESET and cumulative SET operations for high-performance neuro-inspired computing. Our PCH architecture is amenable to industrial production as an intrinsic materials solution, without complex manufacturing procedure or much increased fabrication cost.

Phase-change heterostructure enables ultralow noise and drift for memory operation / Ding, K.; Wang, J.; Zhou, Y.; Tian, H.; Lu, L.; Mazzarello, R.; Jia, C.; Zhang, W.; Rao, F.; Ma, E.. - In: SCIENCE. - ISSN 0036-8075. - 366:6462(2019), pp. 210-215. [10.1126/science.aay0291]

Titolo:	Phase-change heterostructure enables ultralow noise and drift for memory operation
Autori:	Ding K. (Co-primo) Wang J. (Co-primo) Zhou Y. (Co-primo) Tian H. (Co-primo) Lu L. MAZZARELLO, RICCARDO Jia C. Zhang W. (Corresponding author) Rao F. (Corresponding author) Ma E. (Ultimo) (Corresponding author) mostra contributor esterni nascondi contributor esterni
Data di pubblicazione:	2019
Rivista:	SCIENCE
Citazione:	Phase-change heterostructure enables ultralow noise and drift for memory operation / Ding, K.; Wang, J.; Zhou, Y.; Tian, H.; Lu, L.; Mazzarello, R.; Jia, C.; Zhang, W.; Rao, F.; Ma, E.. - In: SCIENCE. - ISSN 0036-8075. - 366:6462(2019), pp. 210-215. [10.1126/science.aay0291]
Handle:	http://hdl.handle.net/11573/1460708
Appartiene alla tipologia:	01a Articolo in rivista

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