We report on the characterization of the response of windowless silicon avalanche photodiodes to electrons in the 90-900 eV energy range. The electrons were provided by a monoenergetic electron gun present in the LASEC laboratories of University of Roma Tre. We find that the avalanche photo-diode generates a current proportional to the current of electrons hitting its active surface. The gain is found to depend on the electron energy , and varies from 2.147+-0.027 (for = 90 eV) to 385.8+-3.3 (for = 900 eV), when operating the diode at a bias of apd = 350V. This is the first time silicon avalanche photo-diodes are employed to measure electrons with <1 keV.
Response of windowless silicon avalanche photo-diodes to electrons in the 90–900 eV range / Apponi, A.; Cavoto, G.; Iannone, M.; Mariani, C.; Pandolfi, F.; Paoloni, D.; Rago, I.; Ruocco, A.. - In: JOURNAL OF INSTRUMENTATION. - ISSN 1748-0221. - 15:11(2020). [10.1088/1748-0221/15/11/P11015]
Titolo: | Response of windowless silicon avalanche photo-diodes to electrons in the 90–900 eV range | |
Autori: | ||
Data di pubblicazione: | 2020 | |
Rivista: | ||
Citazione: | Response of windowless silicon avalanche photo-diodes to electrons in the 90–900 eV range / Apponi, A.; Cavoto, G.; Iannone, M.; Mariani, C.; Pandolfi, F.; Paoloni, D.; Rago, I.; Ruocco, A.. - In: JOURNAL OF INSTRUMENTATION. - ISSN 1748-0221. - 15:11(2020). [10.1088/1748-0221/15/11/P11015] | |
Handle: | http://hdl.handle.net/11573/1454540 | |
Appartiene alla tipologia: | 01a Articolo in rivista |
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