A new 2D-FDTD method has been proposed to analyze the dispersion diagram of planar circuits. Traveling wave field effect transistor (TWFET) is a solid state device designed to amplify signals over a wide bandwidth. An analysis of the passive behavior of this device has been performed using mode-matching technique and assuming that the passive structure performances are affected only by the width of the T bar of the gate electrode. To verify such hypothesis and to determine the cut-off frequency of the higher order modes that limits its bandwidth, we have simplified the 2D-FDTD method with a particular normalization, that permits the analysis of the case β=0. The proposed approach was tested calculating the dispersion for some known structures and it has been used in the TWFET characterization.
Improved 2D-FDTD method for TWFET bandwidth characterization / Angiolini, Carlo; D'Inzeo, Guglielmo; Rota, Pasquale. - 2:(1995), pp. 789-792. (Intervento presentato al convegno 1995 IEEE MTT-S International Microwave Symposium tenutosi a Orlando, FL, USA,).
Improved 2D-FDTD method for TWFET bandwidth characterization
D'Inzeo Guglielmo;
1995
Abstract
A new 2D-FDTD method has been proposed to analyze the dispersion diagram of planar circuits. Traveling wave field effect transistor (TWFET) is a solid state device designed to amplify signals over a wide bandwidth. An analysis of the passive behavior of this device has been performed using mode-matching technique and assuming that the passive structure performances are affected only by the width of the T bar of the gate electrode. To verify such hypothesis and to determine the cut-off frequency of the higher order modes that limits its bandwidth, we have simplified the 2D-FDTD method with a particular normalization, that permits the analysis of the case β=0. The proposed approach was tested calculating the dispersion for some known structures and it has been used in the TWFET characterization.File | Dimensione | Formato | |
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