The appearance of single photon sources in atomically thin semiconductors holds great promises for the development of a flexible and ultracompact quantum technology in which elastic strain engineering can be used to tailor their emission properties. Here, we show a compact and hybrid two-dimensional semiconductor-piezoelectric device that allows for controlling the energy of single photons emitted by quantum emitters localized in wrinkled WSe2 monolayers. We demonstrate that strain fields exerted by the piezoelectric device can be used to tune the energy of localized excitons in WSe2 up to 18 meV in a reversible manner while leaving the single photon purity unaffected over a wide range. Interestingly, we find that the magnitude and, in particular, the sign of the energy shift as a function of stress is emitter dependent. With the help of finite element simulations we suggest a simple model that explains our experimental observations and, furthermore, discloses that the type of strain (tensile or compressive) experienced by the quantum emitters strongly depends on their localization across the wrinkles. Our findings are of strong relevance for the practical implementation of single photon devices based on two-dimensional materials as well as for understanding the effects of strain on their emission properties.

Strain-Tunable Single Photon Sources in WSe2 Monolayers / Iff, O.; Tedeschi, D.; Martin-Sanchez, J.; Moczala-Dusanowska, M.; Tongay, S.; Yumigeta, K.; Taboada-Gutierrez, J.; Savaresi, M.; Rastelli, A.; Alonso-Gonzalez, P.; Hofling, S.; Trotta, R.; Schneider, C.. - In: NANO LETTERS. - ISSN 1530-6984. - 19:10(2019), pp. 6931-6936. [10.1021/acs.nanolett.9b02221]

Strain-Tunable Single Photon Sources in WSe2 Monolayers

Tedeschi D.;Savaresi M.;Trotta R.;
2019

Abstract

The appearance of single photon sources in atomically thin semiconductors holds great promises for the development of a flexible and ultracompact quantum technology in which elastic strain engineering can be used to tailor their emission properties. Here, we show a compact and hybrid two-dimensional semiconductor-piezoelectric device that allows for controlling the energy of single photons emitted by quantum emitters localized in wrinkled WSe2 monolayers. We demonstrate that strain fields exerted by the piezoelectric device can be used to tune the energy of localized excitons in WSe2 up to 18 meV in a reversible manner while leaving the single photon purity unaffected over a wide range. Interestingly, we find that the magnitude and, in particular, the sign of the energy shift as a function of stress is emitter dependent. With the help of finite element simulations we suggest a simple model that explains our experimental observations and, furthermore, discloses that the type of strain (tensile or compressive) experienced by the quantum emitters strongly depends on their localization across the wrinkles. Our findings are of strong relevance for the practical implementation of single photon devices based on two-dimensional materials as well as for understanding the effects of strain on their emission properties.
2D materials; elastic strain engineering; photoluminescence; piezoelectric devices; single photon emitters; tungsten diselenide monolayers
01 Pubblicazione su rivista::01a Articolo in rivista
Strain-Tunable Single Photon Sources in WSe2 Monolayers / Iff, O.; Tedeschi, D.; Martin-Sanchez, J.; Moczala-Dusanowska, M.; Tongay, S.; Yumigeta, K.; Taboada-Gutierrez, J.; Savaresi, M.; Rastelli, A.; Alonso-Gonzalez, P.; Hofling, S.; Trotta, R.; Schneider, C.. - In: NANO LETTERS. - ISSN 1530-6984. - 19:10(2019), pp. 6931-6936. [10.1021/acs.nanolett.9b02221]
File allegati a questo prodotto
File Dimensione Formato  
Iff_preprint_StainTunable_2019.pdf

accesso aperto

Tipologia: Documento in Pre-print (manoscritto inviato all'editore, precedente alla peer review)
Licenza: Tutti i diritti riservati (All rights reserved)
Dimensione 704.79 kB
Formato Adobe PDF
704.79 kB Adobe PDF Visualizza/Apri PDF
Iff_StainTunable_2019.pdf

accesso aperto

Tipologia: Versione editoriale (versione pubblicata con il layout dell'editore)
Licenza: Tutti i diritti riservati (All rights reserved)
Dimensione 2.58 MB
Formato Adobe PDF
2.58 MB Adobe PDF Visualizza/Apri PDF

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1413195
Citazioni
  • ???jsp.display-item.citation.pmc??? 5
  • Scopus 46
  • ???jsp.display-item.citation.isi??? 44
social impact