This work reports on the characterization of stability of amorphous silicon diodes used as temperature sensors in lab-on-chip systems. We found that under constant forward current injection, the voltage drop over the diode changes depending on the values of current and injection time. The optimized operating conditions for practical applications have been established on the base of the obtained experimental data.
Stability of hydrogenated amorphous silicon diodes as thin film temperature sensors / Lovecchio, N.; de Cesare, G.; Nascetti, A.; Buzzin, A.; Caputo, D.. - 629:(2020), pp. 259-264. (Intervento presentato al convegno 20th AISEM National conference on sensors and microsystems, 2019 tenutosi a Naples; Italy) [10.1007/978-3-030-37558-4_39].
Stability of hydrogenated amorphous silicon diodes as thin film temperature sensors
Lovecchio N.;de Cesare G.;Nascetti A.;Buzzin A.;Caputo D.
2020
Abstract
This work reports on the characterization of stability of amorphous silicon diodes used as temperature sensors in lab-on-chip systems. We found that under constant forward current injection, the voltage drop over the diode changes depending on the values of current and injection time. The optimized operating conditions for practical applications have been established on the base of the obtained experimental data.| File | Dimensione | Formato | |
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