Stoichiometric EuFBiS 2 with mixed valent Eu shows self-doped superconductivity at low temperatures due to the Eu-to-Bi charge transfer. The metallic/nonmetallic bistability of the BiS 2 layer can couple with the valence fluctuation of Eu and provide a highly susceptible electronic state. Here, we report space-resolved photoemission measurements on EuFBiS 2 revealing an inhomogeneous charge distribution with the coexistence of metallic and nonmetallic phases at mesoscopic length scales. Angle-resolved photoemission measurements using a submicron beam size have confirmed a clear Fermi surface around the zone boundaries in the metallic region, typically observed in a doped system, while it can be hardly seen in the nonmetallic region. Density functional theory calculations suggest that the out-of-plane S atom position in the structure is one of the important factors for the self-doping in this material.

Inhomogeneous charge distribution in a self-doped EuFBiS2 superconductor / Sugimoto, T.; Paris, E.; Terashima, K.; Barinov, A.; Giampietri, A.; Wakita, T.; Yokoya, T.; Kajitani, J.; Higashinaka, R.; Matsuda, T. D.; Aoki, Y.; Mizokawa, T.; Saini, N. L.. - In: PHYSICAL REVIEW. B. - ISSN 2469-9950. - 100:6(2019). [10.1103/PhysRevB.100.064520]

Inhomogeneous charge distribution in a self-doped EuFBiS2 superconductor

Paris E.;Giampietri A.;Saini N. L.
2019

Abstract

Stoichiometric EuFBiS 2 with mixed valent Eu shows self-doped superconductivity at low temperatures due to the Eu-to-Bi charge transfer. The metallic/nonmetallic bistability of the BiS 2 layer can couple with the valence fluctuation of Eu and provide a highly susceptible electronic state. Here, we report space-resolved photoemission measurements on EuFBiS 2 revealing an inhomogeneous charge distribution with the coexistence of metallic and nonmetallic phases at mesoscopic length scales. Angle-resolved photoemission measurements using a submicron beam size have confirmed a clear Fermi surface around the zone boundaries in the metallic region, typically observed in a doped system, while it can be hardly seen in the nonmetallic region. Density functional theory calculations suggest that the out-of-plane S atom position in the structure is one of the important factors for the self-doping in this material.
2019
BiS2-based superconductors, self-doping, space resolved ARPES, electronic structure
01 Pubblicazione su rivista::01a Articolo in rivista
Inhomogeneous charge distribution in a self-doped EuFBiS2 superconductor / Sugimoto, T.; Paris, E.; Terashima, K.; Barinov, A.; Giampietri, A.; Wakita, T.; Yokoya, T.; Kajitani, J.; Higashinaka, R.; Matsuda, T. D.; Aoki, Y.; Mizokawa, T.; Saini, N. L.. - In: PHYSICAL REVIEW. B. - ISSN 2469-9950. - 100:6(2019). [10.1103/PhysRevB.100.064520]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1383600
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