Scandium can be used to influence the stoichiometry of SiC during growth of the hexagonal polytypes. Using PL-EPR and total energy calculations in the framework of density functional theory, scandiurn is predicted to be built in predominantly at the Si-sublattice in form of Sc-Si acceptors with acceptor levels at 0.55 eV (6H-SiC) and 0.48 eV (4H-SiC). In addition, new PL-EPR spectra are found with a large anisotropy in the g-tensor suggesting defect pairs as an origin.

New insight in scandium-mediated growth techniques: Sc-related defects in 4H-SiC and 6H-SiC / Gerstmann, U.; Greulich-Weber, ; S., and Rauls; Spaeth, J. -M.; Kalabukhova, E. N.; Mokhov, E. N.; Mauri, F.. - 556-557:(2007), pp. 469-472.

New insight in scandium-mediated growth techniques: Sc-related defects in 4H-SiC and 6H-SiC

Mauri, F.
2007

Abstract

Scandium can be used to influence the stoichiometry of SiC during growth of the hexagonal polytypes. Using PL-EPR and total energy calculations in the framework of density functional theory, scandiurn is predicted to be built in predominantly at the Si-sublattice in form of Sc-Si acceptors with acceptor levels at 0.55 eV (6H-SiC) and 0.48 eV (4H-SiC). In addition, new PL-EPR spectra are found with a large anisotropy in the g-tensor suggesting defect pairs as an origin.
2007
scandium; crystal growth; paramagnetic resonance; g-tensor; densityfunctional theory
01 Pubblicazione su rivista::01a Articolo in rivista
New insight in scandium-mediated growth techniques: Sc-related defects in 4H-SiC and 6H-SiC / Gerstmann, U.; Greulich-Weber, ; S., and Rauls; Spaeth, J. -M.; Kalabukhova, E. N.; Mokhov, E. N.; Mauri, F.. - 556-557:(2007), pp. 469-472.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1337194
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