We present a detailed study of the high-current transport properties of graphene devices patterned in a four-point configuration. The current tends to saturate as the voltage across graphene is increased but never reaches the complete saturation as in metallic nanotubes. Measurements are compared to a model based on the Boltzmann equation, which includes electron-scattering processes due to charged and neutral impurities, and graphene optical phonons. The saturation is incomplete because of the competition between disorder and optical phonon scattering.
Transport Properties of Graphene in the High-Current Limit / Barreiro, Amelia; Lazzeri, Michele; Moser, Joel; Mauri, Francesco; Bachtold, Adrian. - In: PHYSICAL REVIEW LETTERS. - ISSN 0031-9007. - 103:7(2009). [10.1103/PhysRevLett.103.076601]
Transport Properties of Graphene in the High-Current Limit
Mauri, Francesco;
2009
Abstract
We present a detailed study of the high-current transport properties of graphene devices patterned in a four-point configuration. The current tends to saturate as the voltage across graphene is increased but never reaches the complete saturation as in metallic nanotubes. Measurements are compared to a model based on the Boltzmann equation, which includes electron-scattering processes due to charged and neutral impurities, and graphene optical phonons. The saturation is incomplete because of the competition between disorder and optical phonon scattering.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
