In this work we elucidate the microscopic origin of the dominant radiation induced I-II spectra in p-type doped 4H-SiC. By calculating the electronic g-tensor from first principles in the framework of density functional theory, basal antisite pairs Si(C)C(Si)(+) are shown to give rise to the characteristic anisotropic g-tensors found in the electron paramagnetic resonance (EPR) measurements. Additional central hyperfine (hf) splittings of about 100 MHz due to the Si(C) antisite nuclei are predicted theoretically and also resolved experimentally. We have, thus, identified antisite pairs as a dominant defect in electron and proton irradiated p-type doped 4H-SiC.
Si(C)C(Si) Antisite Pairs as Dominant Irradiation Induced Defects in p-type 4H-SiC / Gerstmann, U.; Seitsonen, A. P.; Mauri, F.; von Bardeleben, H. J.. - 615-617:(2009), pp. 357-360.
Si(C)C(Si) Antisite Pairs as Dominant Irradiation Induced Defects in p-type 4H-SiC
Mauri, F.;
2009
Abstract
In this work we elucidate the microscopic origin of the dominant radiation induced I-II spectra in p-type doped 4H-SiC. By calculating the electronic g-tensor from first principles in the framework of density functional theory, basal antisite pairs Si(C)C(Si)(+) are shown to give rise to the characteristic anisotropic g-tensors found in the electron paramagnetic resonance (EPR) measurements. Additional central hyperfine (hf) splittings of about 100 MHz due to the Si(C) antisite nuclei are predicted theoretically and also resolved experimentally. We have, thus, identified antisite pairs as a dominant defect in electron and proton irradiated p-type doped 4H-SiC.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
