We report a theoretical/experimental study of current-voltage characteristics (I-V) of graphene devices near the Dirac point. The I-V can be described by a power law (I alpha V(alpha) with 1 < alpha <= 1.5). The exponent is higher when the mobility is lower. This superlinear I-V is interpreted in terms of the interplay between Zener-Klein transport, that is tunneling between different energy bands, and defect scattering. Surprisingly, the Zener-Klein tunneling is made visible by the presence of defects.
Current-voltage characteristics of graphene devices: Interplay between Zener-Klein tunneling and defects / Vandecasteele, Niels; Barreiro, Amelia; Lazzeri, Michele; Bachtold, Adrian; Mauri, Francesco. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 82:4(2010). [10.1103/PhysRevB.82.045416]
Current-voltage characteristics of graphene devices: Interplay between Zener-Klein tunneling and defects
Mauri, Francesco
2010
Abstract
We report a theoretical/experimental study of current-voltage characteristics (I-V) of graphene devices near the Dirac point. The I-V can be described by a power law (I alpha V(alpha) with 1 < alpha <= 1.5). The exponent is higher when the mobility is lower. This superlinear I-V is interpreted in terms of the interplay between Zener-Klein transport, that is tunneling between different energy bands, and defect scattering. Surprisingly, the Zener-Klein tunneling is made visible by the presence of defects.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
