The nearest-neighbor antisite pair defects in 4H-SiC, 6H-SiC, and 3C-SiC single crystals have been identified using electron paramagnetic resonance spectroscopy in combination with a nonperturbative ab initio scheme for the electronic g tensor. Based on the theoretical predictions, the positively charged defect has been found experimentally also in the cubic 3C-SiC polytype where it is characterized by spin 1/2 and highly anisotropic g values of g(xx)=2.0030, g(yy)=2.0241, and g(zz)=2.0390 within C-1h symmetry. The exceptional large g values are explained by details of the spin-orbit coupling causing a strongly anisotropic quenching of the orbital angular momentum of the p-like unpaired electron.
SiCCSi antisite pairs in SiC identified as paramagnetic defects with strongly anisotropic orbital quenching / Gerstmann, U.; Seitsonen, A. P.; Ceresoli, D.; Mauri, F.; von Bardeleben, H. J.; Cantin, J. L.; Garcia Lopez, J.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 81:19(2010). [10.1103/PhysRevB.81.195208]
SiCCSi antisite pairs in SiC identified as paramagnetic defects with strongly anisotropic orbital quenching
Mauri, F.;
2010
Abstract
The nearest-neighbor antisite pair defects in 4H-SiC, 6H-SiC, and 3C-SiC single crystals have been identified using electron paramagnetic resonance spectroscopy in combination with a nonperturbative ab initio scheme for the electronic g tensor. Based on the theoretical predictions, the positively charged defect has been found experimentally also in the cubic 3C-SiC polytype where it is characterized by spin 1/2 and highly anisotropic g values of g(xx)=2.0030, g(yy)=2.0241, and g(zz)=2.0390 within C-1h symmetry. The exceptional large g values are explained by details of the spin-orbit coupling causing a strongly anisotropic quenching of the orbital angular momentum of the p-like unpaired electron.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
