we present a new way to tune the electron phonon coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K acquires a strong dependency on the doping level due to electron electron correlation not accounted in mean-field approaches. Such a dependency influences the dispersion (with respect to the laser energy) of the Raman D and 2D lines and the splitting of the 2D peak in multilayer graphene. Finally this doping dependence opens the possibility to construct tunable electronic devices through external control of the EPC.
Doped Graphene as Tunable Electron-Phonon Coupling Material / Attaccalite, Claudio; Wirtz, Ludger; Lazzeri, Michele; Mauri, Francesco; Rubio, Angel. - In: NANO LETTERS. - ISSN 1530-6984. - 10:4(2010), pp. 1172-1176. [10.1021/nl9034626]
Doped Graphene as Tunable Electron-Phonon Coupling Material
Mauri, Francesco;
2010
Abstract
we present a new way to tune the electron phonon coupling (EPC) in graphene by changing the deformation potential with electron/hole doping. We show the EPC for highest optical branch at the high symmetry point K acquires a strong dependency on the doping level due to electron electron correlation not accounted in mean-field approaches. Such a dependency influences the dispersion (with respect to the laser energy) of the Raman D and 2D lines and the splitting of the 2D peak in multilayer graphene. Finally this doping dependence opens the possibility to construct tunable electronic devices through external control of the EPC.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
