The growth of Ag deposited onto the GaAs(001)2 x 4 has been investigated by means of scanning tunnelling microscopy. Silver forms islands (Volmer-Weber growth) whose average dimension increases according to Theta(1/z) (with z = 4.2). Theta being the number of Ag atoms deposited at constant rate onto GaAs. The Ag islands exhibit a hut shape with 210 and 310 facets. The kinetic of surface coverage has been measured and the Avrami exponent, 12, has been determined, finding n = 0.61. Both z and n are related to the dynamic nature of the growth process. (C) 2000 Elsevier Science S.A. All rights reserved.

Scaling law and dynamical exponent in the Volmer-Weber growth mode: Silver on GaAs(001)2 × 4 / Placidi, E.; Fanfoni, M.; Arciprete, F.; Patella, F.; Motta, N.; Balzarotti, A.. - In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. - ISSN 0921-5107. - 69-70:(2000), pp. 243-246. [10.1016/S0921-5107(99)00303-7]

Scaling law and dynamical exponent in the Volmer-Weber growth mode: Silver on GaAs(001)2 × 4

Placidi E.
Primo
Project Administration
;
2000

Abstract

The growth of Ag deposited onto the GaAs(001)2 x 4 has been investigated by means of scanning tunnelling microscopy. Silver forms islands (Volmer-Weber growth) whose average dimension increases according to Theta(1/z) (with z = 4.2). Theta being the number of Ag atoms deposited at constant rate onto GaAs. The Ag islands exhibit a hut shape with 210 and 310 facets. The kinetic of surface coverage has been measured and the Avrami exponent, 12, has been determined, finding n = 0.61. Both z and n are related to the dynamic nature of the growth process. (C) 2000 Elsevier Science S.A. All rights reserved.
2000
Avrami; GaAs; Scaling law; STM; Volmer-Weber
01 Pubblicazione su rivista::01a Articolo in rivista
Scaling law and dynamical exponent in the Volmer-Weber growth mode: Silver on GaAs(001)2 × 4 / Placidi, E.; Fanfoni, M.; Arciprete, F.; Patella, F.; Motta, N.; Balzarotti, A.. - In: MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY. - ISSN 0921-5107. - 69-70:(2000), pp. 243-246. [10.1016/S0921-5107(99)00303-7]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1327428
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