High-resolution electron energy-loss measurements performed in situ on GaAS(001)-c(4 x 4) surfaces grown by molecular beam epitaxy reveal a number of intrinsic features so far unobserved. The one-to-one correspondence found between experimental and calculated electronic transitions provides for the first time a satisfactory understanding of the electronic properties of this prototype surface. The optical surface anisotropy originates entirely from very few atomic layers beneath the surface. This gives to the energy-loss anisotropy data two orders of magnitude higher surface sensitivity than that of reflectance difference spectroscopies. (C) 2002 Elsevier Science B.V. All rights reserved.
The GaAs(0 0 1)- c(4 × 4) surface: A new perspective from energy loss spectra / Balzarotti, A.; Fanfoni, M.; Patella, F.; Arciprete, F.; Placidi, E.; Onida, G.; Del Sole, R.. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 524:1-3(2003), pp. L71-L76. [10.1016/S0039-6028(02)02540-2]
The GaAs(0 0 1)- c(4 × 4) surface: A new perspective from energy loss spectra
Placidi E.;
2003
Abstract
High-resolution electron energy-loss measurements performed in situ on GaAS(001)-c(4 x 4) surfaces grown by molecular beam epitaxy reveal a number of intrinsic features so far unobserved. The one-to-one correspondence found between experimental and calculated electronic transitions provides for the first time a satisfactory understanding of the electronic properties of this prototype surface. The optical surface anisotropy originates entirely from very few atomic layers beneath the surface. This gives to the energy-loss anisotropy data two orders of magnitude higher surface sensitivity than that of reflectance difference spectroscopies. (C) 2002 Elsevier Science B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
