Structural study of the InAs quantum-dot nucleation on GaAs (001) was discussed. Atomic force microscopy was used. It was found that structural features are important for two-to-three-dimensional transition and also contributes to final morphology.

Structural study of the InAs quantum-dot nucleation on GaAs(001) / Patella, F.; Nufris, S.; Arciprete, F.; Fanfoni, M.; Placidi, E.; Sgarlata, A.; Balzarotti, A.. - In: MICROELECTRONICS. - ISSN 0026-2692. - 34:5-8(2003), pp. 419-422. [10.1016/S0026-2692(03)00038-7]

Structural study of the InAs quantum-dot nucleation on GaAs(001)

Placidi E.;
2003

Abstract

Structural study of the InAs quantum-dot nucleation on GaAs (001) was discussed. Atomic force microscopy was used. It was found that structural features are important for two-to-three-dimensional transition and also contributes to final morphology.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11573/1327414
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