We have investigated, by means of atomic force microscopy, the complete evolution of InAs/GaAs(001) quantum dots as a function of deposited InAs. Direct evidence is found for step erosion by quantum dots nucleated onto the step edge and an estimate of the eroded volume is provided. By studying the quantum dots volume as a function of InAs coverage, we show that the wetting layer contribution is confined within a narrow range of coverage around the two- and three-dimensional transition. (c) 2005 American Institute of Physics.

Step erosion during nucleation of InAsGaAs (001) quantum dots / Placidi, E.; Arciprete, F.; Sessi, V.; Fanfoni, M.; Patella, F.; Balzarotti, A.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 86:24(2005), pp. 1-3. [10.1063/1.1946181]

Step erosion during nucleation of InAsGaAs (001) quantum dots

Placidi E.
Primo
Project Administration
;
2005

Abstract

We have investigated, by means of atomic force microscopy, the complete evolution of InAs/GaAs(001) quantum dots as a function of deposited InAs. Direct evidence is found for step erosion by quantum dots nucleated onto the step edge and an estimate of the eroded volume is provided. By studying the quantum dots volume as a function of InAs coverage, we show that the wetting layer contribution is confined within a narrow range of coverage around the two- and three-dimensional transition. (c) 2005 American Institute of Physics.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11573/1327240
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