We studied the temperature dependence of the two-dimensional to three-dimensional growth transition in InAs/GaAs(001) heteroepitaxy by means of reflection high energy electron diffraction and atomic force microscopy. The observed shift of the transition to higher InAs deposition times, at temperatures above 500 degrees C, is not a change of critical thickness for islanding, which instead, is constant in the 450-560 degrees C range. Consequently, In-Ga intermixing and surface and interface strain have a negligible dependence on temperature in this range.
Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001) / Patella, F.; Arciprete, F.; Fanfoni, M.; Balzarotti, A.; Placidi, E.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 88:16(2006). [10.1063/1.2189915]
Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001)
Placidi E.Ultimo
2006
Abstract
We studied the temperature dependence of the two-dimensional to three-dimensional growth transition in InAs/GaAs(001) heteroepitaxy by means of reflection high energy electron diffraction and atomic force microscopy. The observed shift of the transition to higher InAs deposition times, at temperatures above 500 degrees C, is not a change of critical thickness for islanding, which instead, is constant in the 450-560 degrees C range. Consequently, In-Ga intermixing and surface and interface strain have a negligible dependence on temperature in this range.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
