High-resolution electron-energy-loss spectroscopy (EELS) has been applied to investigate the electronic structure of the GaAs(001)-c(4x4) and beta 2(2x4) reconstructions by means of successive exposure to molecular oxygen. Measurements have been performed on high-quality samples grown in situ by molecular beam epitaxy (MBE). We coupled the experimental findings with calculated spectra [density functional theory in the local density approximation (DFT-LDA)] to investigate the origin of surface states involved in the transitions and possible mechanisms of oxidation.
Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy / Placidi, E.; Hogan, C.; Arciprete, F.; Fanfoni, M.; Patella, F.; Del Sole, R.; Balzarotti, A.. - In: PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS. - ISSN 1098-0121. - 73:20(2006). [10.1103/PhysRevB.73.205345]
Adsorption of molecular oxygen on GaAs(001) studied using high-resolution electron energy-loss spectroscopy
Placidi E.
Primo
Project Administration
;
2006
Abstract
High-resolution electron-energy-loss spectroscopy (EELS) has been applied to investigate the electronic structure of the GaAs(001)-c(4x4) and beta 2(2x4) reconstructions by means of successive exposure to molecular oxygen. Measurements have been performed on high-quality samples grown in situ by molecular beam epitaxy (MBE). We coupled the experimental findings with calculated spectra [density functional theory in the local density approximation (DFT-LDA)] to investigate the origin of surface states involved in the transitions and possible mechanisms of oxidation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
