In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by means of low-energy electron diffraction (LEED), soft X-ray photoemission (SXPS), and reflectance anisotropy (RAS) spectroscopies. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing InClx and phosphorus. Annealing at 230 C induces desorption of InClx overlayer and reveals a P-rich (2 x 1) surface. Subsequent annealing at higher temperature induces In-rich (2 x 4) surface. The structural properties of chemically prepared InP(001) surfaces were found to be similar to those obtained by decapping of As/P-capped epitaxial layers. (c) 2006 Elsevier B.V. All rights reserved.
Chemically prepared well-ordered InP(0 0 1) surfaces / Tereshchenko, O. E.; Paget, D.; Chiaradia, P.; Placidi, E.; Bonnet, J. E.; Wiame, F.; Taleb-Ibrahimi, A.. - In: SURFACE SCIENCE. - ISSN 0039-6028. - 600:16(2006), pp. 3160-3166. [10.1016/j.susc.2006.05.056]
Chemically prepared well-ordered InP(0 0 1) surfaces
Placidi E.;
2006
Abstract
In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by means of low-energy electron diffraction (LEED), soft X-ray photoemission (SXPS), and reflectance anisotropy (RAS) spectroscopies. The treatment removes the natural oxide and leaves on the surface a physisorbed overlayer containing InClx and phosphorus. Annealing at 230 C induces desorption of InClx overlayer and reveals a P-rich (2 x 1) surface. Subsequent annealing at higher temperature induces In-rich (2 x 4) surface. The structural properties of chemically prepared InP(001) surfaces were found to be similar to those obtained by decapping of As/P-capped epitaxial layers. (c) 2006 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
