We present a detailed Atomic Force Microscopy study of InAs/GaAs (001) self-assembled quantum dots, grown by Molecular Beam Epitaxy, during its complete evolution cycle, transition from 2D islands to 3D islands. We created the dots by deposing InAs on a GaAs substrate. After a critical InAs coverage value is reached the dots become self-assembled due to strain. The resulting dots typically have a height of 5.7 nm and an emission at about 900 nm occurs until a second critical coverage point is traversed.

The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy / Bute, O.; Cimpoca, Gh. V.; Placidi, E.; Arciprete, F.; Patella, F.; Fanfoni, M.; Balzarotti, A.. - In: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. - ISSN 1454-4164. - 10:1(2008), pp. 74-79.

The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy

Placidi E.;
2008

Abstract

We present a detailed Atomic Force Microscopy study of InAs/GaAs (001) self-assembled quantum dots, grown by Molecular Beam Epitaxy, during its complete evolution cycle, transition from 2D islands to 3D islands. We created the dots by deposing InAs on a GaAs substrate. After a critical InAs coverage value is reached the dots become self-assembled due to strain. The resulting dots typically have a height of 5.7 nm and an emission at about 900 nm occurs until a second critical coverage point is traversed.
2008
Nanomaterials; Quantum dots; Self assembling
01 Pubblicazione su rivista::01a Articolo in rivista
The monitoring of 2d-3d transition for InAs/GaAs (001) self-assembled quantum dots by atomic force microscopy / Bute, O.; Cimpoca, Gh. V.; Placidi, E.; Arciprete, F.; Patella, F.; Fanfoni, M.; Balzarotti, A.. - In: JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS. - ISSN 1454-4164. - 10:1(2008), pp. 74-79.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1326913
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