We report on single dot microphotoluminescence (mu PL) emission at low temperature and low power from InAs dots grown by molecular beam epitaxy in nanoscale holes of a SiO(2) mask deposited on GaAs(001). By comparing atomic force microscopy measurements with mu PL data, we show that the dot sizes inside the nanoholes are smaller than those of the dots nucleated on the extended GaAs surface. PL of dots spans a wide energy range depending on their size and on the thickness and composition of the InGaAs capping layer. Time-resolved PL experiments demonstrate a negligible loss of radiative recombination efficiency, proving highly effective in the site-controlled dot nucleation.
Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach / Patella, F.; Arciprete, F.; Placidi, E.; Fanfoni, M.; Balzarotti, A.; Vinattieri, A.; Cavigli, L.; Abbarchi, M.; Gurioli, M.; Lunghi, L.; Gerardino, A.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 93:23(2008), p. 231904. [10.1063/1.3040327]
Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach
Placidi E.;
2008
Abstract
We report on single dot microphotoluminescence (mu PL) emission at low temperature and low power from InAs dots grown by molecular beam epitaxy in nanoscale holes of a SiO(2) mask deposited on GaAs(001). By comparing atomic force microscopy measurements with mu PL data, we show that the dot sizes inside the nanoholes are smaller than those of the dots nucleated on the extended GaAs surface. PL of dots spans a wide energy range depending on their size and on the thickness and composition of the InGaAs capping layer. Time-resolved PL experiments demonstrate a negligible loss of radiative recombination efficiency, proving highly effective in the site-controlled dot nucleation.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
