The aspect ratio and faceting evolution of quantum dots grown at 500 degrees C were studied as a function of postgrowth annealing temperature. We show that faceting and aspect ratio strictly depend on growth conditions. The evolution toward {136} and {137} facets is kinetically limited and occurs under different experimental conditions. Furthermore long annealing procedures lead to the occurrence of low aspect ratio domes different from those forming at higher growth temperatures.

Annealing effects on faceting of InAsGaAs (001) quantum dots / Placidi, E.; Della Pia, A.; Arciprete, F.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 94:2(2009). [10.1063/1.3056654]

Annealing effects on faceting of InAsGaAs (001) quantum dots

Placidi E.
Primo
Project Administration
;
Della Pia A.;
2009

Abstract

The aspect ratio and faceting evolution of quantum dots grown at 500 degrees C were studied as a function of postgrowth annealing temperature. We show that faceting and aspect ratio strictly depend on growth conditions. The evolution toward {136} and {137} facets is kinetically limited and occurs under different experimental conditions. Furthermore long annealing procedures lead to the occurrence of low aspect ratio domes different from those forming at higher growth temperatures.
Semiconductor quantum dots, Nanocrystals, Wetting layer
01 Pubblicazione su rivista::01a Articolo in rivista
Annealing effects on faceting of InAsGaAs (001) quantum dots / Placidi, E.; Della Pia, A.; Arciprete, F.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 94:2(2009). [10.1063/1.3056654]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1326899
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