The aspect ratio and faceting evolution of quantum dots grown at 500 degrees C were studied as a function of postgrowth annealing temperature. We show that faceting and aspect ratio strictly depend on growth conditions. The evolution toward {136} and {137} facets is kinetically limited and occurs under different experimental conditions. Furthermore long annealing procedures lead to the occurrence of low aspect ratio domes different from those forming at higher growth temperatures.
Annealing effects on faceting of InAsGaAs (001) quantum dots / Placidi, E.; Della Pia, A.; Arciprete, F.. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - 94:2(2009). [10.1063/1.3056654]
Annealing effects on faceting of InAsGaAs (001) quantum dots
Placidi E.
Primo
Project Administration
;Della Pia A.;
2009
Abstract
The aspect ratio and faceting evolution of quantum dots grown at 500 degrees C were studied as a function of postgrowth annealing temperature. We show that faceting and aspect ratio strictly depend on growth conditions. The evolution toward {136} and {137} facets is kinetically limited and occurs under different experimental conditions. Furthermore long annealing procedures lead to the occurrence of low aspect ratio domes different from those forming at higher growth temperatures.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
