The evolution of InAs and In(0.85)Mn(0.15)As quantum dots grown at 270 °C is studied as a function of coverage. We show that, in contrast to what occurs at high temperature, the two-dimensional to three-dimensional transition is not abrupt but rather slow. This is due to the finding that part of the deposited material also contributes to the wetting layer growth after quantum dot formation. This aspect is particularly accentuated in In(0.85)Mn(0.15)As deposition. The Voronoi area analysis reveals a significant spatial correlation between islands.

Comparative study of low temperature growth of InAs and InMnAs quantum dots / Placidi, E.; Zallo, E.; Arciprete, F.; Fanfoni, M.; Patella, F.; Balzarotti, A.. - In: NANOTECHNOLOGY. - ISSN 0957-4484. - 22:19(2011). [10.1088/0957-4484/22/19/195602]

Comparative study of low temperature growth of InAs and InMnAs quantum dots

Placidi E.
Primo
Project Administration
;
2011

Abstract

The evolution of InAs and In(0.85)Mn(0.15)As quantum dots grown at 270 °C is studied as a function of coverage. We show that, in contrast to what occurs at high temperature, the two-dimensional to three-dimensional transition is not abrupt but rather slow. This is due to the finding that part of the deposited material also contributes to the wetting layer growth after quantum dot formation. This aspect is particularly accentuated in In(0.85)Mn(0.15)As deposition. The Voronoi area analysis reveals a significant spatial correlation between islands.
Arsenic; Arsenicals; Cold Temperature; Diffusion; Indium; Kinetics; Manganese; Microscopy, Atomic Force; Nanotechnology; Quantum Dots
01 Pubblicazione su rivista::01a Articolo in rivista
Comparative study of low temperature growth of InAs and InMnAs quantum dots / Placidi, E.; Zallo, E.; Arciprete, F.; Fanfoni, M.; Patella, F.; Balzarotti, A.. - In: NANOTECHNOLOGY. - ISSN 0957-4484. - 22:19(2011). [10.1088/0957-4484/22/19/195602]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1326815
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