https://doi.org/10.1179/2055031614Y.0000000007
The selective growth of InAs quantum dot chains self-ordered at mesoscopic distances on a rippled GaAs(001) substrate is obtained by tuning the direction of the As flux at high temperature and high As/In flux ratio. Microphotoluminescence experiments demonstrate that such isolated quantum dot chains show single quantum dot emission properties.
Single QD emission from arrays of QD chains obtained by patterning-free method / Placidi, E; Arciprete, F; Sarti, F; Gurioli, M; Vinattieri, A; Patella, F. - In: ADVANCED DEVICE MATERIALS. - ISSN 2055-0308. - 1:(2015), pp. 33-37. [10.1179/2055031614Y.0000000007]
Single QD emission from arrays of QD chains obtained by patterning-free method
Placidi E;
2015
Abstract
The selective growth of InAs quantum dot chains self-ordered at mesoscopic distances on a rippled GaAs(001) substrate is obtained by tuning the direction of the As flux at high temperature and high As/In flux ratio. Microphotoluminescence experiments demonstrate that such isolated quantum dot chains show single quantum dot emission properties.| File | Dimensione | Formato | |
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