The effect of the As flux on the kinetics of Ga and In cations, and the role of the elastic strain were studied in the capping process of isolated InAs quantum dots with GaAs by molecular beam epitaxy. Using a fixed evaporation geometry and a suitable choice of growth parameters which enhance the anisotropic diffusion of In and Ga cations, we obtained, at variance with current results, the formation of asymmetric GaAs caps. The growth of a second InAs layer led to the formation of vertically aligned couples of dots (one buried, the other uncapped) placed on the right side of the GaAs caps on the surface, with no other dots in different locations. Published by AIP Publishing.

Anisotropic cation diffusion in the GaAs capping of InAs/GaAs(001) quantum dots / Tisbi, E.; Latini, V.; Patella, F.; Placidi, E.; Arciprete, F.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 120:23(2016). [10.1063/1.4972033]

Anisotropic cation diffusion in the GaAs capping of InAs/GaAs(001) quantum dots

Placidi E.
Supervision
;
2016

Abstract

The effect of the As flux on the kinetics of Ga and In cations, and the role of the elastic strain were studied in the capping process of isolated InAs quantum dots with GaAs by molecular beam epitaxy. Using a fixed evaporation geometry and a suitable choice of growth parameters which enhance the anisotropic diffusion of In and Ga cations, we obtained, at variance with current results, the formation of asymmetric GaAs caps. The growth of a second InAs layer led to the formation of vertically aligned couples of dots (one buried, the other uncapped) placed on the right side of the GaAs caps on the surface, with no other dots in different locations. Published by AIP Publishing.
Semiconductor quantum dots; Nanocrystals; Wetting layer
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Anisotropic cation diffusion in the GaAs capping of InAs/GaAs(001) quantum dots / Tisbi, E.; Latini, V.; Patella, F.; Placidi, E.; Arciprete, F.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 120:23(2016). [10.1063/1.4972033]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1325949
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