In this paper we report on an x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) investigation of the Mn/GaAs(001) interface. The deposition of Mn in the submonolayer regime on the GaAs(001) surface at 390 degrees C induces a (2 x 1) reconstruction which evolves to a (2 x 2) by increasing the Mn amount. The combined information from XAS and XMCD indicates that the Mn atoms are located on surface sites possessing an almost square symmetry with a limited hybridization of the Mn electronic levels with the GaAs ones. The Mn atoms present a magnetic moment ranging between 4.9 and 4.2 mu(B) depending on the surface reconstruction. The Mn/GaAs(001) interface shows a paramagnetic behavior with an average magnetic moment which decreases by increasing the Mn amount. This variation of the surface magnetization is interpreted as an antiferromagnetic coupling of the Mn magnetic moments as the surface density of Mn atoms is increased. A further increase of the Mn amount after the (2 x 2) transition leads to the formation of Mn aggregates on the sample surface.

Two-dimensional antiferromagnetic ordering of the Mn/GaAs(001) interface / Colonna, S; Sessi, V; Placidi, E; Ronci, F; Jimenez, E; Arciprete, F. - In: PHYSICAL REVIEW. B. - ISSN 2469-9950. - 99:(2019). [10.1103/PhysRevB.99.115311]

Two-dimensional antiferromagnetic ordering of the Mn/GaAs(001) interface

Placidi E
Membro del Collaboration Group
;
2019

Abstract

In this paper we report on an x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD) investigation of the Mn/GaAs(001) interface. The deposition of Mn in the submonolayer regime on the GaAs(001) surface at 390 degrees C induces a (2 x 1) reconstruction which evolves to a (2 x 2) by increasing the Mn amount. The combined information from XAS and XMCD indicates that the Mn atoms are located on surface sites possessing an almost square symmetry with a limited hybridization of the Mn electronic levels with the GaAs ones. The Mn atoms present a magnetic moment ranging between 4.9 and 4.2 mu(B) depending on the surface reconstruction. The Mn/GaAs(001) interface shows a paramagnetic behavior with an average magnetic moment which decreases by increasing the Mn amount. This variation of the surface magnetization is interpreted as an antiferromagnetic coupling of the Mn magnetic moments as the surface density of Mn atoms is increased. A further increase of the Mn amount after the (2 x 2) transition leads to the formation of Mn aggregates on the sample surface.
2019
Magnetic semiconductors; Ferromagnetism; Impurity band
01 Pubblicazione su rivista::01a Articolo in rivista
Two-dimensional antiferromagnetic ordering of the Mn/GaAs(001) interface / Colonna, S; Sessi, V; Placidi, E; Ronci, F; Jimenez, E; Arciprete, F. - In: PHYSICAL REVIEW. B. - ISSN 2469-9950. - 99:(2019). [10.1103/PhysRevB.99.115311]
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1325843
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