Equivalent electrical model of a-Si:H diodes for lab-on-chip technology

This work presents an equivalent electrical circuit of hydrogenated amorphous silicon diodes. It is constituted by four diodes and two resistances. Each element is directly related to the physical behavior of the thin film structure and models the different conduction regimes of the device.Results show a very good fitting of the experimental current-voltage characteristic up to several hundreds of millivolts in both forward and reverse bias conditions and demonstrate the suitability of the developed model for designing the diode fabrication parameters for specific application.