Effects arising from the intercalation of excess oxygen in Bi-O layer has been observed at room temperature using atomic force microscopy. The excess oxygen is incorporated by oxygenating the pure sample. The oxygen is trapped between the alternating Bi-O layers along the b direction. This leads to a change in the local interatomic bond length along the b axis, while the periodicity remained invariant along the a axis. In addition, in-plane atomically resolved structure of single crystal has been imaged at room temperature using AFM. The lattice spacings indicate that the observed structure corresponds to the in-plane bismuth and oxygen positions. Furthermore, high-resolution scanning tunneling spectroscopy measurements show that oxygen doping increases the Bi-O layer density of states near the Fermi level giving rise to metallicity, whereas the pure sample reveals a semiconducting energy gap in the tunneling spectrum. (C) 1995 American Institute of Physics.

Observation of Intercalation of Excess Oxygen in Bi2Sr2CaCu2O8+y Single Crystal / G. S., Shekhawat; RAM P., Gupta; A., Agarwal; P. D., Vyas; P., Srivastava; Saini, Naurang Lal; S., Venkatesh; K. B., Garg. - In: APPLIED PHYSICS LETTERS. - ISSN 0003-6951. - STAMPA. - 67:(1995), p. 3343. [10.1063/1.115241]

Observation of Intercalation of Excess Oxygen in Bi2Sr2CaCu2O8+y Single Crystal

SAINI, Naurang Lal;
1995

Abstract

Effects arising from the intercalation of excess oxygen in Bi-O layer has been observed at room temperature using atomic force microscopy. The excess oxygen is incorporated by oxygenating the pure sample. The oxygen is trapped between the alternating Bi-O layers along the b direction. This leads to a change in the local interatomic bond length along the b axis, while the periodicity remained invariant along the a axis. In addition, in-plane atomically resolved structure of single crystal has been imaged at room temperature using AFM. The lattice spacings indicate that the observed structure corresponds to the in-plane bismuth and oxygen positions. Furthermore, high-resolution scanning tunneling spectroscopy measurements show that oxygen doping increases the Bi-O layer density of states near the Fermi level giving rise to metallicity, whereas the pure sample reveals a semiconducting energy gap in the tunneling spectrum. (C) 1995 American Institute of Physics.
File allegati a questo prodotto
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/130466
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 1
  • ???jsp.display-item.citation.isi??? 2
social impact