Spectroscopic techniques, including photoelectron spectroscopy, diffuse reflectance, and x-ray absorption, are used to investigate the electronic structure and the local structure of LaOBiS 2 - xSe x thermoelectric material. It is found that Se substitution effectively suppresses local distortion that can be responsible for the increased carrier mobility together with a change in the electronic structure. The results suggest a possible way to control thermoelectric properties by tuning of the local crystal structure of these materials.
Enhanced thermoelectricity by controlled local structure in bismuth-chalcogenides / Terashima, K., Yano, Y., Paris, E., Goto, Y., Mizuguchi, Y., Kamihara, Y., Wakita, T., Muraoka, Y., Saini, N.L., Yokoya, T.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 125:14(2019), p. 145105. [10.1063/1.5087096]
Enhanced thermoelectricity by controlled local structure in bismuth-chalcogenides
Paris, E.;Saini, N. L.;
2019
Abstract
Spectroscopic techniques, including photoelectron spectroscopy, diffuse reflectance, and x-ray absorption, are used to investigate the electronic structure and the local structure of LaOBiS 2 - xSe x thermoelectric material. It is found that Se substitution effectively suppresses local distortion that can be responsible for the increased carrier mobility together with a change in the electronic structure. The results suggest a possible way to control thermoelectric properties by tuning of the local crystal structure of these materials.| File | Dimensione | Formato | |
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