Spectroscopic techniques, including photoelectron spectroscopy, diffuse reflectance, and x-ray absorption, are used to investigate the electronic structure and the local structure of LaOBiS 2 - xSe x thermoelectric material. It is found that Se substitution effectively suppresses local distortion that can be responsible for the increased carrier mobility together with a change in the electronic structure. The results suggest a possible way to control thermoelectric properties by tuning of the local crystal structure of these materials.
Enhanced thermoelectricity by controlled local structure in bismuth-chalcogenides / Terashima, K.; Yano, Y.; Paris, E.; Goto, Y.; Mizuguchi, Y.; Kamihara, Y.; Wakita, T.; Muraoka, Y.; Saini, N. L.; Yokoya, T.. - In: JOURNAL OF APPLIED PHYSICS. - ISSN 0021-8979. - 125:14(2019), p. 145105. [10.1063/1.5087096]
Enhanced thermoelectricity by controlled local structure in bismuth-chalcogenides
Paris, E.;Saini, N. L.;
2019
Abstract
Spectroscopic techniques, including photoelectron spectroscopy, diffuse reflectance, and x-ray absorption, are used to investigate the electronic structure and the local structure of LaOBiS 2 - xSe x thermoelectric material. It is found that Se substitution effectively suppresses local distortion that can be responsible for the increased carrier mobility together with a change in the electronic structure. The results suggest a possible way to control thermoelectric properties by tuning of the local crystal structure of these materials.| File | Dimensione | Formato | |
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