Hardness of hafnium carbide films deposited on silicon by pulsed laser ablation was investigated. The films were deposited on polished silicon (100) substrates using a pulsed laser ablation deposition (PLAD) apparatus. Hardness of HfC was found to be lower than that of TiC. This was attributed to the difference in the density of electron states at the fermi surface in TiC and HfC.
Hardness of hafnium carbide films deposited on silicon by pulsed laser ablation / S. m., Barinov; Ferro, Daniela; Bartuli, Cecilia; L., D'Alessio. - In: JOURNAL OF MATERIALS SCIENCE LETTERS. - ISSN 0261-8028. - STAMPA. - 20:16(2001), pp. 1485-1487.
Hardness of hafnium carbide films deposited on silicon by pulsed laser ablation
FERRO, DANIELA;BARTULI, Cecilia;
2001
Abstract
Hardness of hafnium carbide films deposited on silicon by pulsed laser ablation was investigated. The films were deposited on polished silicon (100) substrates using a pulsed laser ablation deposition (PLAD) apparatus. Hardness of HfC was found to be lower than that of TiC. This was attributed to the difference in the density of electron states at the fermi surface in TiC and HfC.File allegati a questo prodotto
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