Scope of the work is to get a comprehensive study on electrical and optical characteristics of SiOx:H film within the role of CO and H in the film growth and composition and on how the Oxygen additionchanges the film structure and Hydrogen inclusion in the amorphous matrix and their chemical bonding with silicon. We monitored the effective lifetime tEFF and FTIR spectraon as-deposited and thermal treated samples to understand the passivation mechanism,correlating wafer lifetime and Hydrogen inclusion in sub-oxide film. H dilution in the gas mixture was the key to enhances passivation quality on c-Si wafers.

Hydrogenated silicon sub-oxide film for an effective and thermal stable silicon surface passivation / Serenelli, Luca; Martini, Luca; Menchini, Francesca; Izzi, Massimo; Bobeico, Eugenia; Usatii, Iuri; Asquini, Rita; Caputo, Domenico; Cesare, Giampiero De; Veneri, Paola Delli; Tucci, Mario. - (2018), pp. 3108-3112. ((Intervento presentato al convegno 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018 tenutosi a WAIKOLOA, HAWAII [10.1109/PVSC.2018.8548009].

Hydrogenated silicon sub-oxide film for an effective and thermal stable silicon surface passivation

Serenelli, Luca;Martini, Luca;Menchini, Francesca;Asquini, Rita;Caputo, Domenico;Cesare, Giampiero De;
2018

Abstract

Scope of the work is to get a comprehensive study on electrical and optical characteristics of SiOx:H film within the role of CO and H in the film growth and composition and on how the Oxygen additionchanges the film structure and Hydrogen inclusion in the amorphous matrix and their chemical bonding with silicon. We monitored the effective lifetime tEFF and FTIR spectraon as-deposited and thermal treated samples to understand the passivation mechanism,correlating wafer lifetime and Hydrogen inclusion in sub-oxide film. H dilution in the gas mixture was the key to enhances passivation quality on c-Si wafers.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1217013
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