Germanium-on-silicon waveguides were modeled, fabricated and characterized at wavelengths ranging from 7.5 to 11 µm. Measured waveguide losses are below 5 dB/cm for both TE and TM polarization and reach values of ∼ 1 dB/cm for ≥ 10 µm wavelengths for the TE polarization. This work demonstrates experimentally for the first time that Ge-on-Si is a viable waveguide platform for sensing in the molecular fingerprint spectral region. Detailed modeling and analysis is presented to identify the various loss contributions, showing that with practical techniques losses below 1 dB/cm could be achieved across the full measurement range.
Low loss Ge-on-Si waveguides operating in the 8–14 µm atmospheric transmission window / Gallacher, K.; Millar, R. W.; Griškevičiūte, U.; Baldassarre, L.; Sorel, M.; Ortolani, M.; Paul, D. J.. - In: OPTICS EXPRESS. - ISSN 1094-4087. - 26:20(2018), p. 25667. [10.1364/OE.26.025667]
Low loss Ge-on-Si waveguides operating in the 8–14 µm atmospheric transmission window
Baldassarre, L.;Ortolani, M.;
2018
Abstract
Germanium-on-silicon waveguides were modeled, fabricated and characterized at wavelengths ranging from 7.5 to 11 µm. Measured waveguide losses are below 5 dB/cm for both TE and TM polarization and reach values of ∼ 1 dB/cm for ≥ 10 µm wavelengths for the TE polarization. This work demonstrates experimentally for the first time that Ge-on-Si is a viable waveguide platform for sensing in the molecular fingerprint spectral region. Detailed modeling and analysis is presented to identify the various loss contributions, showing that with practical techniques losses below 1 dB/cm could be achieved across the full measurement range.File | Dimensione | Formato | |
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