In crystalline silicon based heterojunction solar cells the surface passivation quality is fundamental to obtain high efficiency. Intrinsic a-Si:H, as obtained by PECVD process from silane dissociation, is a good candidate for surface passivation, but UV absorption of this material limits the current generation. Moreover, surface passivation quality can be compromised when fabrication steps, following the a-Si:H deposition, exceed the a-Si:H deposition temperature. Both drawbacks can be overcome introducing a source of oxygen in PECVD process, obtaining a-SiOx:H layer that provides at the same time high quality passivation, wider optical bandgap and less susceptible to temperature steps than a-Si:H. In this work we compared two heterojunction solar cells different only for front side passivation layer, consisting of a-Si:H or a-SiOx:H. We monitored lifetime and implied Voc during fabrication steps and evaluated the final I-V characteristics and quantum efficiency. We found that the UV light soaking together with heating during subsequent sputtering process, increased lifetime of cell with a-SiOx:H more than that with a-Si:H. Likewise the cell having a-SiOx:H as passivation layer showed electrical parameters higher than the a-Si:H counterpart. Indeed Jsc and Voc were 1mA/cm2 and 20mV respectively higher in cell with a-SiOx:H than in cell with a-Si:H. In particular cell with a-SiOx:H layer achieved an implied Voc of 751mV.

Comparison between a-SiOx:H and a-Si:H as passivation buffer layer for heterojunction solar cells / Martini, L.; Serenelli, L.; Menchini, F.; Izzi, M.; Asquini, R.; De Cesare, G.; Caputo, D.; Tucci, M.. - STAMPA. - (2017), pp. 773-776. (Intervento presentato al convegno 33rd European PV Solar Energy Conference and Exhibition tenutosi a Amsterdam, the Netherlands) [10.4229/eupvsec20172017-2av.3.30].

Comparison between a-SiOx:H and a-Si:H as passivation buffer layer for heterojunction solar cells

L. Martini;L. Serenelli;F. Menchini;M. Izzi;R. Asquini;G. De Cesare;D. Caputo;
2017

Abstract

In crystalline silicon based heterojunction solar cells the surface passivation quality is fundamental to obtain high efficiency. Intrinsic a-Si:H, as obtained by PECVD process from silane dissociation, is a good candidate for surface passivation, but UV absorption of this material limits the current generation. Moreover, surface passivation quality can be compromised when fabrication steps, following the a-Si:H deposition, exceed the a-Si:H deposition temperature. Both drawbacks can be overcome introducing a source of oxygen in PECVD process, obtaining a-SiOx:H layer that provides at the same time high quality passivation, wider optical bandgap and less susceptible to temperature steps than a-Si:H. In this work we compared two heterojunction solar cells different only for front side passivation layer, consisting of a-Si:H or a-SiOx:H. We monitored lifetime and implied Voc during fabrication steps and evaluated the final I-V characteristics and quantum efficiency. We found that the UV light soaking together with heating during subsequent sputtering process, increased lifetime of cell with a-SiOx:H more than that with a-Si:H. Likewise the cell having a-SiOx:H as passivation layer showed electrical parameters higher than the a-Si:H counterpart. Indeed Jsc and Voc were 1mA/cm2 and 20mV respectively higher in cell with a-SiOx:H than in cell with a-Si:H. In particular cell with a-SiOx:H layer achieved an implied Voc of 751mV.
2017
33rd European PV Solar Energy Conference and Exhibition
heterojunction; amorphous; oxides
04 Pubblicazione in atti di convegno::04b Atto di convegno in volume
Comparison between a-SiOx:H and a-Si:H as passivation buffer layer for heterojunction solar cells / Martini, L.; Serenelli, L.; Menchini, F.; Izzi, M.; Asquini, R.; De Cesare, G.; Caputo, D.; Tucci, M.. - STAMPA. - (2017), pp. 773-776. (Intervento presentato al convegno 33rd European PV Solar Energy Conference and Exhibition tenutosi a Amsterdam, the Netherlands) [10.4229/eupvsec20172017-2av.3.30].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11573/1151727
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