Inverted perovskite solar cells with transparent hole transporting layer based on semiconducting nickel oxide

Perovskite (CH3NH3PbI3) solar cells (PSCs) were produced in the inverted architecture employing transparent nickel oxide (NiO) as hole transporting layer (HTL). The different functional layers of the photoconversion device were solution processed in ambient conditions the HTL of NiO being prepared via sol-gel and successively deposited by spin-coating. The conditions of preparation of the transparent HTL were optimized through the stabilization of the nickel-containing sol with bulky alcohols and strong inorganic acids. The photoactive layer of CH3NH3PbI3 was deposited in air at high relative humidity (ca. 50-60%). The electron selective contact was constituted by spin coated 3H-cyclopropa[1,9] [5,6]fullerene-C60-Ih-3'-butanoic acid 3'-phenyl methyl ester (PCBM) with solution processed 2,9-Dimethyl-4,7-diphenyl-1,10-phenanthroline (bathocuproine, BCP) as interlayer. The deposition of CH3NH3PbI3 in ambient conditions as well as the processing of the BCP interlayer from solution simplified enormously the entire procedure of device fabrication. The largest value of photoconversion efficiency (PCE) we achieved with the inverted architecture photocells was 14 % with an average PCE of 12 %. The solar cells displayed an hysteresis-free behavior with excellent time stability of the maximum power output.