In this article a class AB single-ended power amplifier with 30-512 MHz frequency band and 100 W saturated output power has been designed and implemented using a GaN transistor. The measured compressed gain is 19 ± 1 dB, the average PAE is 61% and the return loss is always better than −7.5 dB.
30–512 MHz power amplifier design using GaN transistor / Pisa, Stefano; Chicarella, Simone; Cusani, Roberto; Citrolo, Jerome. - In: MICROWAVE AND OPTICAL TECHNOLOGY LETTERS. - ISSN 0895-2477. - STAMPA. - 60:5(2018), pp. 1280-1286. [10.1002/mop.31155]
30–512 MHz power amplifier design using GaN transistor
Pisa, Stefano;Chicarella, Simone;Cusani, Roberto;
2018
Abstract
In this article a class AB single-ended power amplifier with 30-512 MHz frequency band and 100 W saturated output power has been designed and implemented using a GaN transistor. The measured compressed gain is 19 ± 1 dB, the average PAE is 61% and the return loss is always better than −7.5 dB.File allegati a questo prodotto
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