Highly indistinguishable and strongly entangled photons from symmetric GaAs quantum dots

The development of scalable sources of non-classical light is fundamental to unlocking thetechnological potential of quantum photonics. Semiconductor quantum dots are emerging asnear-optimal sources of indistinguishable single photons. However, their performance assources of entangled-photon pairs are still modest compared to parametric down converters.Photons emitted from conventional Stranski–Krastanov InGaAs quantum dots have shownnon-optimal levels of entanglement and indistinguishability. For quantum networks, bothcriteria must be met simultaneously. Here, we show that this is possible with a system thathas received limited attention so far: GaAs quantum dots. They can emit triggered polar-ization-entangled photons with high purity (g(2)(0) = 0.002±0.002), high indistinguish-ability (0.93±0.07 for 2 ns pulse separation) and high entanglement fidelity(0.94±0.01). Our results show that GaAs might be the material of choice for quantum-dotentanglement sources in future quantum technologies