A filterless class-AB/D audio power amplifier integrated into a feature-rich 2.5G/3G baseband processor in standard 65-nm CMOS technology is designed for direct battery hookup in mobile phone applications. Circuit techniques are used to overcome the voltage limitations of standard MOS transistors for operation at voltage levels of 2.5-4.8 V. Both amplifiers can drive more than 650 mW into an 8-Omega load with maximum distortion levels of 1% and 5% for class-D and class-AB, respectively, all from a 3.6-V power supply. The achieved power-supply-rejection ratios are 72 and 84 dB, respectively. The mono implementation of both amplifiers together is 0.44 mm(2).
A Class-AB/D Audio Power Amplifier for Mobile Applications Integrated Into a 2.5G/3G Baseband Processor / Willem H., Groeneweg; Bernard, Pilloud; Filippo, Neri; Guido, Notermans; Balucani, Marco; Markus, Helfenstein. - In: IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS. I, REGULAR PAPERS. - ISSN 1549-8328. - STAMPA. - 57:5(2010), pp. 1003-1016. [10.1109/tcsi.2010.2046954]
A Class-AB/D Audio Power Amplifier for Mobile Applications Integrated Into a 2.5G/3G Baseband Processor
BALUCANI, Marco;
2010
Abstract
A filterless class-AB/D audio power amplifier integrated into a feature-rich 2.5G/3G baseband processor in standard 65-nm CMOS technology is designed for direct battery hookup in mobile phone applications. Circuit techniques are used to overcome the voltage limitations of standard MOS transistors for operation at voltage levels of 2.5-4.8 V. Both amplifiers can drive more than 650 mW into an 8-Omega load with maximum distortion levels of 1% and 5% for class-D and class-AB, respectively, all from a 3.6-V power supply. The achieved power-supply-rejection ratios are 72 and 84 dB, respectively. The mono implementation of both amplifiers together is 0.44 mm(2).I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
