Continuous crystalline films of zinc oxide (ZnO) with thicknesses of 6-10 mu m were obtained by electrochemical deposition from aqueous zinc nitrate solutions on silicon substrates with a buffer nickel layer. X-ray diffraction measurements showed that the polycrystalline films possess a hexagonal crystal lattice with predominant (0002) orientation. The obtained ZnO films exhibit strong photoluminescence in the visible spectral range at room temperature.
Visible Photoluminescence of Zinc Oxide Films Electrochemically Deposited on Silicon Substrates / E. B., Chubenko; V. P., Bondarenk; Balucani, Marco. - In: TECHNICAL PHYSICS LETTERS. - ISSN 1063-7850. - STAMPA. - 35:12(2009), pp. 1160-1162. [10.1134/s1063785009120256]
Visible Photoluminescence of Zinc Oxide Films Electrochemically Deposited on Silicon Substrates
BALUCANI, Marco
2009
Abstract
Continuous crystalline films of zinc oxide (ZnO) with thicknesses of 6-10 mu m were obtained by electrochemical deposition from aqueous zinc nitrate solutions on silicon substrates with a buffer nickel layer. X-ray diffraction measurements showed that the polycrystalline films possess a hexagonal crystal lattice with predominant (0002) orientation. The obtained ZnO films exhibit strong photoluminescence in the visible spectral range at room temperature.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
