Interconnected oscillations of current, lattice temperature and electron-hole pair concentration were observed in silicon on insulator (SOI) structures upon heating with current at extremely high power. They occur because of the joint action of two competing mechanisms: temperature dependent thermal generation of electron-hole pairs and pair concentration decreasing by current flowing in silicon film through a non-uniform temperature field.
High-amplitude and high-frequency oscillations of temperature and current in SOI structure / V. N., Dobrovolsky; L. V., Ishchuk; G. K., Ninidze; Balucani, Marco; G., Lamedica; A., Ferrari. - In: MICROELECTRONIC ENGINEERING. - ISSN 0167-9317. - STAMPA. - 48:1(1999), pp. 343-346. (Intervento presentato al convegno Proceedings of the 1999 11th Biennial Conference on Insulating Films on Semiconductors (INFOS'99) tenutosi a Kloster Banz, Ger nel 16 June 1999 through 19 June 1999) [10.1016/s0167-9317(99)00401-3].
High-amplitude and high-frequency oscillations of temperature and current in SOI structure
BALUCANI, Marco;
1999
Abstract
Interconnected oscillations of current, lattice temperature and electron-hole pair concentration were observed in silicon on insulator (SOI) structures upon heating with current at extremely high power. They occur because of the joint action of two competing mechanisms: temperature dependent thermal generation of electron-hole pairs and pair concentration decreasing by current flowing in silicon film through a non-uniform temperature field.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
